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Proceedings Paper

Optimization of stochastic EUV resist models parameters to mitigate line edge roughness
Author(s): John J. Biafore; Azat Latypov; Anindarupa Chunder; Andy Brendler; Todd Bailey; Harry J. Levinson
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Paper Abstract

The optimization problem of reducing EUV line edge roughness (LER) of a given feature, subject to the tolerance constraints on a CD of this feature at nominal EUV process conditions and several off-nominal conditions, is formulated. A stochastic rigorous Monte-Carlo EUV resist model is employed to solve this stochastic optimization problem. Several options for optimization algorithms, suitable for the solution of the formulated EUV LER optimization problem, are presented and discussed, along with the results of their tests.

Paper Details

Date Published: 24 March 2017
PDF: 10 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101432B (24 March 2017); doi: 10.1117/12.2258707
Show Author Affiliations
John J. Biafore, KLA-Tencor Corp. (United States)
Azat Latypov, GLOBALFOUNDRIES Inc. (United States)
Anindarupa Chunder, GLOBALFOUNDRIES Inc. (United States)
Andy Brendler, GLOBALFOUNDRIES Inc. (United States)
Todd Bailey, GLOBALFOUNDRIES Inc. (United States)
Harry J. Levinson, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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