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Proceedings Paper

Mix-and-match considerations for EUV insertion in N7 HVM
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Paper Abstract

An optimal mix-match control strategy for EUV and 193i scanners is crucial for the insertion of EUV lithography at 7nm technology node. The systematic differences between these exposure systems introduce additional cross-platform mixmatch overlay errors. In this paper, we quantify the EUV specific contributions to mix-match overlay, and explore the effectiveness of higher-order interfield and intrafield corrections on minimizing the on-product mix-match overlay errors. We also analyze the impact of intra-field sampling plans in terms of model accuracy and adequacy in capturing EUV specific intra-field signatures. Our analysis suggests that more intra-field measurements and appropriate placement of the metrology targets within the field are required to achieve the on-product overlay control goals for N7 HVM.

Paper Details

Date Published: 24 March 2017
PDF: 10 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101430F (24 March 2017); doi: 10.1117/12.2258674
Show Author Affiliations
Xuemei Chen, GLOBALFOUNDRIES Inc. (United States)
Allen Gabor, GLOBALFOUNDRIES Inc. (United States)
Pavan Samudrala, GLOBALFOUNDRIES Inc. (United States)
Sheldon Meyers, GLOBALFOUNDRIES Inc. (United States)
Erik Hosler, GLOBALFOUNDRIES Inc. (United States)
Richard Johnson, IBM Research (United States)
Nelson Felix, IBM Research (United States)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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