Share Email Print
cover

Proceedings Paper

Graphene field effect transistor for generating on-chip thermoelectric power
Author(s): Yaser M. Banadaki; Hsuan-Chao Hou; Safura Sharifi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Graphene is a promising material for thermoelectric application due to its large surface-to-volume ratio, high electrical conductivity, and high mechanical strength. In this paper, the thermoelectric properties of a series of narrow armchair graphene nanoribbons (GNR) in semiconducting family GNR(3p+1,0) are evaluated by using the semi-classical Boltzmann theory. It is found that the narrow GNR(7,0) exhibits small thermal conductivity and large TEP of 1170μV / K at small chemical potential μ = 0.1 eV . However, the small electrical conductivity of narrow GNR(7,0) suppresses the thermoelectric figure-of-merit ZT, such that better thermoelectric performance of ZT > 0.01 is achieved only for large chemical potentials, μ > 0.5eV . Our result shows that tuning the chemical potential with respect to ribbon chirality and orientation can enhance the thermoelectric performance of GNRs, however, further increase in thermoelectric power requires phonon engineering to reduce the thermal conductivity of graphene without significant reduction in its thermoelectric power and electrical conductivity.

Paper Details

Date Published: 17 April 2017
PDF: 9 pages
Proc. SPIE 10167, Nanosensors, Biosensors, Info-Tech Sensors and 3D Systems 2017, 101671I (17 April 2017); doi: 10.1117/12.2258654
Show Author Affiliations
Yaser M. Banadaki, Southern Univ. (United States)
Hsuan-Chao Hou, Louisiana State Univ. (United States)
Safura Sharifi, Louisiana State Univ. (United States)


Published in SPIE Proceedings Vol. 10167:
Nanosensors, Biosensors, Info-Tech Sensors and 3D Systems 2017
Vijay K. Varadan, Editor(s)

© SPIE. Terms of Use
Back to Top