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Proceedings Paper

New 3D structuring process for non-integrated circuit related technologies (Conference Presentation)
Author(s): Lamia Nouri; Nicolas Possémé; Stéfan Landis; Frédéric Milesi; Frédéric-Xavier Gaillard
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Paper Abstract

Fabrication processes that microelectronic developed for Integrated circuit (IC) technologies for decades, do not meet the new emerging structuration’s requirements, in particular non-IC related technologies one, such as MEMS/NEMS, Micro-Fluidics, photovoltaics, lenses. Actually complex 3D structuration requires complex lithography patterning approaches such as gray-scale electron beam lithography, laser ablation, focused ion beam lithography, two photon polymerization. It is now challenging to find cheaper and easiest technique to achieve 3D structures.

In this work, we propose a straightforward process to realize 3D structuration, intended for silicon based materials (Si, SiN, SiOCH). This structuration technique is based on nano-imprint lithography (NIL), ion implantation and selective wet etching. In a first step a pattern is performed by lithography on a substrate, then ion implantation is realized through a resist mask in order to create localized modifications in the material, thus the pattern is transferred into the subjacent layer. Finally, after the resist stripping, a selective wet etching is carried out to remove selectively the modified material regarding the non-modified one.

In this paper, we will first present results achieved with simple 2D line array pattern processed either on Silicon or SiOCH samples. This step have been carried out to demonstrate the feasibility of this new structuration process. SEM pictures reveals that “infinite” selectivity between the implanted areas versus the non-implanted one could be achieved. We will show that a key combination between the type of implanted ion species and wet etching chemistries is required to obtain such results.

The mechanisms understanding involved during both implantation and wet etching processes will also be presented through fine characterizations with Photoluminescence, Raman and Secondary Ion Mass Spectrometry (SIMS) for silicon samples, and ellipso-porosimetry and Fourier Transform InfraRed spectroscopy (FTIR) for SiOCH samples. Finally the benefit of this new patterning approach will be presented on 3D patterns structures.

Paper Details

Date Published: 27 April 2017
PDF: 1 pages
Proc. SPIE 10144, Emerging Patterning Technologies, 101440C (27 April 2017); doi: 10.1117/12.2258603
Show Author Affiliations
Lamia Nouri, Commissariat à l'Énergie Atomique (France)
Nicolas Possémé, Commissariat à l'Énergie Atomique (France)
Stéfan Landis, Commissariat à l'Énergie Atomique (France)
Frédéric Milesi, Commissariat à l'Énergie Atomique (France)
Frédéric-Xavier Gaillard, Commissariat à l'Énergie Atomique (France)


Published in SPIE Proceedings Vol. 10144:
Emerging Patterning Technologies
Christopher Bencher, Editor(s)

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