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Proceedings Paper

A test structure for investigation of junctionless FETs as THz radiation sensors
Author(s): Michał Zaborowski; Daniel Tomaszewski; Jacek Marczewski
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Paper Abstract

A test chip for investigation of junctionless FETs as sub-THz electromagnetic radiation detectors is presented. A number of sensors have been included in the chip designed for production on the SOI substrate. The sensors differ one from one another by the presence of an antenna, transistor layout and doping details. A technology for fabrication of transistors with the self-aligned gate and well-controlled gate to n+ source/drain separation distance has been developed. Results of device simulation and electrical characterization are presented in the paper.

Paper Details

Date Published: 22 December 2016
PDF: 7 pages
Proc. SPIE 10175, Electron Technology Conference 2016, 1017512 (22 December 2016); doi: 10.1117/12.2258599
Show Author Affiliations
Michał Zaborowski, Institute of Electron Technology (Poland)
Daniel Tomaszewski, Institute of Electron Technology (Poland)
Jacek Marczewski, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 10175:
Electron Technology Conference 2016
Barbara Swatowska; Wojciech Maziarz; Tadeusz Pisarkiewicz; Wojciech Kucewicz, Editor(s)

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