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Proceedings Paper

Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer
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Paper Abstract

Initial readiness of EUV patterning has been demonstrated at the 7-nm device node with the focus now shifting to driving the 'effective' k1 factor and enabling the second generation of EUV patterning. In current EUV lithography, photoresist thicknesses <30 nm are required to meet resolution targets and mitigate pattern collapse. Etch budgets necessitate the reduction of underlayer thickness as well. Typical spin-on underlayers show high defectivity when reducing thickness to match thinner resist. Inorganic deposited underlayers are lower in defectivity and can potentially enable ultrathin EUV patterning stacks. However, poor resist-inorganic underlayer adhesion severely limits their use. Existing adhesion promotion techniques are found to be either ineffective or negatively affect the etch budget. Here, using a grafted polymer brush adhesion layer we demonstrate an ultrathin EUV patterning stack comprised of inorganic underlayer, polymer brush and resist. We show printing of sub-36 nm pitch features with good lithography process window and low defectivity on various inorganic substrates, with significant improvement over existing adhesion promotion techniques. We systematically study the effect of brush composition, molecular weight and deposition time/temperature to optimize grafting and adhesion. We also show process feasibility and extendibility through pattern transfer from the resist into typical back end stacks.

Paper Details

Date Published: 24 March 2017
PDF: 11 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431D (24 March 2017); doi: 10.1117/12.2258565
Show Author Affiliations
Indira Seshadri, IBM Semiconductor Technology Research (United States)
Anuja De Silva, IBM Semiconductor Technology Research (United States)
Luciana Meli, IBM Semiconductor Technology Research (United States)
Charlie Liu, IBM Semiconductor Technology Research (United States)
Cheng Chi, IBM Semiconductor Technology Research (United States)
Jing Guo, IBM Semiconductor Technology Research (United States)
Kristin Schmidt, IBM Semiconductor Technology Research (United States)
Hoa Truang, IBM Semiconductor Technology Research (United States)
John C. Arnold, IBM Semiconductor Technology Research (United States)
Nelson Felix, IBM Semiconductor Technology Research (United States)
Lovejeet Singh, JSR Micro, Inc. (United States)
Tsuyoshi Furukawa, JSR Micro, Inc. (United States)
Ramakrishnan Ayothi, JSR Micro, Inc. (United States)
Angelique Raley, TEL Technology Ctr., America, LLC (United States)
Richard Farrell, TEL Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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