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Proceedings Paper

Development of TiO2 containing hardmasks through PEALD deposition
Author(s): Anuja De Silva; Indira Seshadri; Kisup Chung; Abraham Arceo; Luciana Meli; Brock Mendoza; Yasir Sulehria; Yiping Yao; Madhana Sunder; Hao Truong; Shravan Matham; Ruqiang Bao; Heng Wu; Nelson M. Felix; Sivananda Kanakasabapathy
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Paper Abstract

With the increasing prevalence of complex device integration schemes, tri layer patterning with a solvent strippable hardmask can have a variety of applications. Spin-on metal hardmasks have been the key enabler for selective removal through wet strip when active areas need to be protected from dry etch damage. As spin-on metal hardmasks require a dedicated track to prevent metal contamination, and are limited in their ability to scale down thickness without comprising on defectivity, there has been a need for a deposited hardmask solution. Modulation of film composition through deposition conditions enables a method to create TiO2 films with wet etch tunability. This paper presents a systematic study on development and characterization of PEALD deposited TiO2-based hardmasks for patterning applications. We demonstrate lithographic process window, pattern profile, and defectivity evaluation for a tri layer scheme patterned with PEALD based TiO2 hardmask and its performance under dry and wet strip conditions. Comparable structural and electrical performance is shown for a deposited vs a spin-on metal hardmask.

Paper Details

Date Published: 27 March 2017
PDF: 11 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014615 (27 March 2017); doi: 10.1117/12.2258380
Show Author Affiliations
Anuja De Silva, IBM Semiconductor Technology Research (United States)
Indira Seshadri, IBM Semiconductor Technology Research (United States)
Kisup Chung, IBM Semiconductor Technology Research (United States)
Abraham Arceo, IBM Semiconductor Technology Research (United States)
Luciana Meli, IBM Semiconductor Technology Research (United States)
Brock Mendoza, IBM Semiconductor Technology Research (United States)
Yasir Sulehria, IBM Semiconductor Technology Research (United States)
Yiping Yao, IBM Semiconductor Technology Research (United States)
Madhana Sunder, IBM Semiconductor Technology Research (United States)
Hao Truong, IBM Semiconductor Technology Research (United States)
Shravan Matham, IBM Semiconductor Technology Research (United States)
Ruqiang Bao, IBM Semiconductor Technology Research (United States)
Heng Wu, IBM Semiconductor Technology Research (United States)
Nelson M. Felix, IBM Semiconductor Technology Research (United States)
Sivananda Kanakasabapathy, IBM Semiconductor Technology Research (United States)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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