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Proceedings Paper

Considerations for pattern placement error correction toward 5nm node
Author(s): Hidetami Yaegashi; Kenichi Oyama; Arisa Hara; Sakurako Natori; Shohei Yamauchi; Masatoshi Yamato; Kyohei Koike; Mark John Maslow; Vadim Timoshkov; Ton Kiers; Paolo Di Lorenzo; Carlos Fonseca
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Paper Abstract

Multi-patterning has been adopted widely in high volume manufacturing as 193 immersion extension, and it becomes realistic solution of nano-order scaling. In fact, it must be key technology on single directional (1D) layout design [1] for logic devise and it becomes a major option for further scaling technique in SAQP. The requirement for patterning fidelity control is getting savior more and more, stochastic fluctuation as well as LER (Line edge roughness) has to be micro-scopic observation aria.

In our previous work, such atomic order controllability was viable in complemented technique with etching and deposition [2]. Overlay issue form major potion in yield management, therefore, entire solution is needed keenly including alignment accuracy on scanner and detectability on overlay measurement instruments. As EPE (Edge placement error) was defined as the gap between design pattern and contouring of actual pattern edge, pattern registration in single process level must be considerable. The complementary patterning to fabricate 1D layout actually mitigates any process restrictions, however, multiple process step, symbolized as LELE with 193-i, is burden to yield management and affordability. Recent progress of EUV technology is remarkable, and it is major potential solution for such complicated technical issues. EUV has robust resolution limit and it must be definitely strong scaling driver for process simplification. On the other hand, its stochastic variation such like shot noise due to light source power must be resolved with any additional complemented technique.

In this work, we examined the nano-order CD and profile control on EUV resist pattern and would introduce excellent accomplishments.

Paper Details

Date Published: 27 March 2017
PDF: 8 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014315 (27 March 2017); doi: 10.1117/12.2258210
Show Author Affiliations
Hidetami Yaegashi, Tokyo Electron Ltd. (Japan)
Kenichi Oyama, Tokyo Electron Ltd. (Japan)
Arisa Hara, Tokyo Electron Ltd. (Japan)
Sakurako Natori, Tokyo Electron Ltd. (Japan)
Shohei Yamauchi, Tokyo Electron Ltd. (Japan)
Masatoshi Yamato, Tokyo Electron Ltd. (Japan)
Kyohei Koike, Tokyo Electron Ltd. (Japan)
Mark John Maslow, ASML Netherlands B.V. (Netherlands)
Vadim Timoshkov, ASML Netherlands B.V. (Netherlands)
Ton Kiers, ASML Netherlands B.V. (Netherlands)
Paolo Di Lorenzo, IMEC (Belgium)
Carlos Fonseca, Tokyo Electron America, Inc. (United States)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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