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Proceedings Paper

Nanoparticle photoresist studies for EUV lithography
Author(s): Kazuki Kasahara; Hong Xu; Vasiliki Kosma; Jeremy Odent; Emmanuel P. Giannelis; Christopher K. Ober
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Paper Abstract

EUV (extreme ultraviolet) lithography is one of the most promising candidates for next generation lithography. The main challenge for EUV resists is to simultaneously satisfy resolution, LWR (line-width roughness) and sensitivity requirements according to the ITRS roadmap. Though polymer type CAR (chemically amplified resist) is the currently standard photoresist, entirely new resist platforms are required due to the performance targets of smaller process nodes. In this paper, recent progress in nanoparticle photoresists which Cornell University has intensely studied is discussed. Lithography performance, especially scum elimination, improvement studies with the dissolution rate acceleration concept and new metal core applications are described.

Paper Details

Date Published: 24 March 2017
PDF: 6 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014308 (24 March 2017); doi: 10.1117/12.2258187
Show Author Affiliations
Kazuki Kasahara, Cornell Univ. (United States)
JSR Corp. (Japan)
Hong Xu, Cornell Univ. (United States)
Vasiliki Kosma, Cornell Univ. (United States)
Jeremy Odent, Cornell Univ. (United States)
Emmanuel P. Giannelis, Cornell Univ. (United States)
Christopher K. Ober, Cornell Univ. (United States)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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