Share Email Print
cover

Proceedings Paper

Self-aligned quadruple patterning using spacer on spacer integration optimization for N5
Author(s): Sophie Thibaut; Angélique Raley; Nihar Mohanty; Subhadeep Kal; Eric Liu; Akiteru Ko; David O'Meara; Kandabara Tapily; Peter Biolsi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

To meet scaling requirements, the semiconductor industry has extended 193nm immersion lithography beyond its minimum pitch limitation using multiple patterning schemes such as self-aligned double patterning, self-aligned quadruple patterning and litho-etch / litho etch iterations. Those techniques have been declined in numerous options in the last few years. Spacer on spacer pitch splitting integration has been proven to show multiple advantages compared to conventional pitch splitting approach. Reducing the number of pattern transfer steps associated with sacrificial layers resulted in significant decrease of cost and an overall simplification of the double pitch split technique.

While demonstrating attractive aspects, SAQP spacer on spacer flow brings challenges of its own. Namely, material set selections and etch chemistry development for adequate selectivities, mandrel shape and spacer shape engineering to improve edge placement error (EPE). In this paper we follow up and extend upon our previous learning and proceed into more details on the robustness of the integration in regards to final pattern transfer and full wafer critical dimension uniformity. Furthermore, since the number of intermediate steps is reduced, one will expect improved uniformity and pitch walking control. This assertion will be verified through a thorough pitch walking analysis.

Paper Details

Date Published: 4 April 2017
PDF: 11 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490I (4 April 2017); doi: 10.1117/12.2258173
Show Author Affiliations
Sophie Thibaut, TEL Technology Ctr., America, LLC (United States)
Angélique Raley, TEL Technology Ctr., America, LLC (United States)
Nihar Mohanty, TEL Technology Ctr., America, LLC (United States)
Subhadeep Kal, TEL Technology Ctr., America, LLC (United States)
Eric Liu, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)
David O'Meara, TEL Technology Ctr., America, LLC (United States)
Kandabara Tapily, TEL Technology Ctr., America, LLC (United States)
Peter Biolsi, TEL Technology Ctr., America, LLC (United States)


Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

© SPIE. Terms of Use
Back to Top