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Proceedings Paper

Anamorphic approach for developing hi-efficiency illumination system to inspect defects on semiconductor wafers
Author(s): Woojun Han; Sunseok Yang; Ohhyung Kwon; Seungyong Chu; Seungchul Oh; Woosung Jung; Jaisoon Kim
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Paper Abstract

General approaches to realize higher sensitivity in optical inspection system are using shorter wavelength including UV and higher NA for objective lens. Extreme performances of imaging and illumination systems in a situation of wellmatched to each other are inevitable for the further effort on an effective optical detection of fine defects in patterned wafer. This study focused on the dark field illumination systems satisfying hi areal uniformity and concentration efficiency for the specific conditions of non-symmetric illumination area and critical slanted angle. Three different types of anamorphic dark field illumination systems namely, Far-field Areal Illumination (FAI), Near-field Areal Illumination (NAI) and Farfield Linear Illumination (FLI), are designed and evaluated by brightness, uniformity and concentration efficiency of beam intensity.

Paper Details

Date Published: 28 March 2017
PDF: 10 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014517 (28 March 2017); doi: 10.1117/12.2258162
Show Author Affiliations
Woojun Han, Myongji Univ. (Korea, Republic of)
Sunseok Yang, Myongji Univ. (Korea, Republic of)
Ohhyung Kwon, Myongji Univ. (Korea, Republic of)
Seungyong Chu, Auros Technology, Inc. (Korea, Republic of)
Seungchul Oh, Auros Technology, Inc. (Korea, Republic of)
Woosung Jung, Auros Technology, Inc. (Korea, Republic of)
Jaisoon Kim, Myongji Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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