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Proceedings Paper

Reactivity of metal-oxalate EUV resists as a function of the central metal
Author(s): Steven Grzeskowiak; Amrit Narasimhan; Michael Murphy; Lee Napolitano; Daniel A. Freedman; Robert L. Brainard; Greg Denbeaux
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Paper Abstract

the microelectronics industry. Traditional EUV photoresists have been composed of organic compounds which are moderately transparent to EUV. Resist stochastics and sensitivity can be improved by increasing the number of photons absorbed. Molecular organometallic resists are a type of metal containing resist aimed at improving EUV absorption. This work focuses on studying the role of the metal center (Metal = Co, Fe, Cr) in an oxalate complex by comparing the number of absorbed photons and the photoelectron reactivity in each compound. In the study presented here, the EUV absorption coefficients are determined experimentally by measuring the transmission through a resist coated on a silicon nitride membrane using an Energetiq EQ-10M xenon plasma EUV source. Additionally, the photochemistry is evaluated by monitoring outgassing reaction products. This particular resist platform eliminates oxalate ligands when exposed to electrons or EUV photons resulting in a solubility difference between the exposed and unexposed regions. In the process, carbon dioxide is produced and is monitored using mass spectrometry, where quantitative values are obtained using a calibration technique. For the metal oxalate complexes studied, the absorption of EUV changed minimally due to the low concentrations of metal atoms. However, EUV and electron reactivity greatly changed between the three compounds likely due to the reducibility of the metal center. A correlation is shown between Esize and the reducibility of each photoresist.

Paper Details

Date Published: 27 March 2017
PDF: 11 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014605 (27 March 2017); doi: 10.1117/12.2258151
Show Author Affiliations
Steven Grzeskowiak, SUNY Polytechnic Institute (United States)
Amrit Narasimhan, SUNY Polytechnic Institute (United States)
Michael Murphy, SUNY Polytechnic Institute (United States)
Lee Napolitano, State Univ. of New York at New Paltz (United States)
Daniel A. Freedman, State Univ. of New York at New Paltz (United States)
Robert L. Brainard, SUNY Polytechnic Institute (United States)
Greg Denbeaux, SUNY Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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