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Proceedings Paper

Improvement of a block co-polymer (PS-b-PDMS) template etch profile using amorphous carbon layer
Author(s): JiSoo Oh; Jong Sik Oh; DaIn Sung; SoonMin Yim; SeungWon Song; GeunYoung Yeom
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Paper Abstract

Block copolymers (BCPs) are consisted of at least two types of monomers which have covalent bonding. One of the widely investigated BCPs is polystyrene-block-polydimethylsiloxane (PS-b-PDMS), which is used as an alternative patterning method for various deep nanoscale devices due to its high Flory-Huggins interaction parameter (χ), such as optical devices and transistors, replacing conventional photolithography. As an alternate or supplementary nextgeneration lithography technology to extreme ultraviolet lithography (EUVL), BCP lithography utilizing the DSA of BCP has been actively studied. However, the nanoscale BCP mask material is easily damaged by the plasma and has a very low etch selectivity over bottom semiconductor materials, because it is composed of polymeric materials even though it contains Si in PDMS. In this study, an amorphous carbon layer (ACL) was inserted as a hardmask material between BCP and materials to be patterned, and, by using O2 plasmas, the characteristics of dry etching of ACL for high aspect ratio (HAR) using a 10 nm PDMS pattern were investigated. The results showed that, by using a PS-b-PDMS pattern with an aspect ratio of 0.3~0.9:1, a HAR PDMS/ACL double layer mask with an aspect ratio of ~10:1 could be fabricated. In addition, by the optimization of the plasma etch process, ACL masks with excellent sidewall roughness (SWR,1.35 nm) and sidewall angle (SWA, 87.9˚) could be fabricated.

Paper Details

Date Published: 21 March 2017
PDF: 6 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490U (21 March 2017); doi: 10.1117/12.2258147
Show Author Affiliations
JiSoo Oh, Sungkyunkwan Univ. (Korea, Republic of)
Jong Sik Oh, Sungkyunkwan Univ. (Korea, Republic of)
DaIn Sung, Sungkyunkwan Univ. (Korea, Republic of)
SoonMin Yim, KAIST (Korea, Republic of)
SeungWon Song, KAIST (Korea, Republic of)
GeunYoung Yeom, Sungkyunkwan Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

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