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Proceedings Paper

Orientation control of silicon containing block-co-polymer with resolution beyond 10nm
Author(s): Yasunobu Someya; Ryuta Mizuochi; Hiroyuki Wakayama; Shinsuke Tadokoro; Masami Kozawa; Rikimaru Sakamoto
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Paper Abstract

Directed Self-Assembly (DSA) process is one of the attractive processes for creating the very fine pitch pattern. In this technology, block-co-polymer is the key material to achieve a fine patterning. Many reports are published with Polystyrene-b-Polymethylmethacrylate (PS-b-PMMA) for DSA applications. But it is difficult to achieve the resolution below 10 nm with PS-b-PMMA because of its low chi value. Etching transfer of PS-b-PMMA is also the key issue due to the low etching selectivity between PS and PMMA during dry etching process. In this report, block-co-polymers that include a Si-containing monomer and an organic monomer were synthesized by living anionic polymerization to supply a high resolution and a high etching contrast. These polymers with a low polydispersity demonstrated lamella morphology that can be oriented by thermal annealing with a neutral surface treatment. The effects of underlayer and top-coat materials were investigated to control the block-co-polymer orientation. These block-co-polymers also achieve a high dry etching contrast.

Paper Details

Date Published: 27 March 2017
PDF: 6 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461Y (27 March 2017); doi: 10.1117/12.2258145
Show Author Affiliations
Yasunobu Someya, Nissan Chemical Industries, Ltd. (Japan)
Ryuta Mizuochi, Nissan Chemical Industries, Ltd. (Japan)
Hiroyuki Wakayama, Nissan Chemical Industries, Ltd. (Japan)
Shinsuke Tadokoro, Nissan Chemical Industries, Ltd. (Japan)
Masami Kozawa, Nissan Chemical Industries, Ltd. (Japan)
Rikimaru Sakamoto, Nissan Chemical Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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