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Proceedings Paper

Plasma-assisted thermal atomic layer etching of Al2O3
Author(s): Andreas Fischer; Richard Janek; John Boniface; Thorsten Lill; K. J. Kanarik; Yang Pan; Vahid Vahedi; Richard A. Gottscho
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Paper Abstract

In this paper, we report on plasma assisted thermal Atomic Layer Etching (ALE) of Al2O3. The surface was modified via a fluorine containing plasma without bias power. The removal was accomplished by a thermal reaction step using tin-(II) acetylacetonate Sn(acac)2. After a few cycles, material removal stopped and growth of a Sn-containing layer was observed. Insertion of a hydrogen plasma step was found to remove the Sn layer and a continuous material removal of 0.5 Å/cycle was measured. The results show that plasma assistance can be used to realize thermal ALE of Al2O3. Specifically, plasma can be used both in the fluorination step and to keep the surface free from contaminations.

Paper Details

Date Published: 21 March 2017
PDF: 5 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490H (21 March 2017); doi: 10.1117/12.2258129
Show Author Affiliations
Andreas Fischer, Lam Research Corp. (United States)
Richard Janek, Lam Research Corp. (United States)
John Boniface, Lam Research Corp. (United States)
Thorsten Lill, Lam Research Corp. (United States)
K. J. Kanarik, Lam Research Corp. (United States)
Yang Pan, Lam Research Corp. (United States)
Vahid Vahedi, Lam Research Corp. (United States)
Richard A. Gottscho, Lam Research Corp. (United States)


Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

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