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Monitoring of 450mm copper seeding and plating process via dark field inspection haze
Author(s): Nithin Yathapu; Milo Tallon; Justin Brown
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Paper Abstract

This study explores the feasibility of utilizing the high throughput non-destructive inspection by Surface Scanning Inspection System (SSIS) of copper wafers to monitor the quality of the copper seeding and electroplating process. Currently copper grain size and surface quality is measured by atomic force microscope (AFM). While AFM provides high resolution information down to 1 um2 it is highly time intensive inspection of a single wafer taking up to 20 minutes. The SSIS in this study provides fast full wafer surface roughness information in 450um × 450um blocks. This paper will also investigate the advantages of identifying wafer level process variation of the copper film deposition with the SSIS versus sampled points of AFM inspection. With full wafer surface roughness information it may be possible to find a commonality between the quality of the copper electroplating process based up on the haze information of the copper seeding wafer.

Paper Details

Date Published: 28 March 2017
PDF: 12 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 1014527 (28 March 2017); doi: 10.1117/12.2258120
Show Author Affiliations
Nithin Yathapu, Global 450 Consortium (G450C) (United States)
Milo Tallon, Global 450 Consortium (G450C) (United States)
Justin Brown, Hitachi High Technologies America, Inc. (United States)


Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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