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Proceedings Paper

Reducing Line Edge Roughness in Si and SiN through plasma etch chemistry optimization for photonic waveguide applications
Author(s): Nathan Marchack; Marwan Khater; Jason Orcutt; Josephine Chang; Steven Holmes; Tymon Barwicz; Swetha Kamlapurkar; William Green; Sebastian Engelmann
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Paper Abstract

The LER and LWR of subtractively patterned Si and SiN waveguides was calculated after each step in the process. It was found for Si waveguides that adjusting the ratio of CF4:CHF3 during the hard mask open step produced reductions in LER of 26 and 43% from the initial lithography for isolated waveguides patterned with partial and full etches, respectively. However for final LER values of 3.0 and 2.5 nm on fully etched Si waveguides, the corresponding optical loss measurements were indistinguishable. For SiN waveguides, introduction of C4H9F to the conventional CF4/CHF3 measurement was able to reduce the mask height budget by a factor of 5, while reducing LER from the initial lithography by 26%.

Paper Details

Date Published: 21 March 2017
PDF: 10 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490F (21 March 2017); doi: 10.1117/12.2258112
Show Author Affiliations
Nathan Marchack, IBM Thomas J. Watson Research Ctr. (United States)
Marwan Khater, IBM Thomas J. Watson Research Ctr. (United States)
Jason Orcutt, IBM Thomas J. Watson Research Ctr. (United States)
Josephine Chang, Northrop Grumman Corp. (United States)
Steven Holmes, IBM Thomas J. Watson Research Ctr. (United States)
Tymon Barwicz, IBM Thomas J. Watson Research Ctr. (United States)
Swetha Kamlapurkar, IBM Thomas J. Watson Research Ctr. (United States)
William Green, IBM Thomas J. Watson Research Ctr. (United States)
Sebastian Engelmann, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

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