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Proceedings Paper

3D SEM characterization of advanced sidewall patterning process (Conference Presentation)
Author(s): Shimon Levi
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Paper Abstract

Sidewall image transfer has become a key enabler of future design shrink. It is consisted of several process steps that multiply the number of lithography backbone patterns in a self-aligned form, shrinking pattern and pitch sizes. The quality of the image transfer process depends on the characteristics of the sidewall pattern morphology. Rectangular Sidewalls with a flat top and vertical edges will result with symmetrical and uniform etched image. On the other hand, Facet top, bent sidewalls, sloped edges or foot, may distort the etched image. In this paper we present a description of the 3DSEM metrology technique used, simulation results, and demonstrate three dimensional characterization of Sidewalls pattern fabricated with different etch recipes: Top Facet measurements vs cross section images; Edge slop and foot characterization

Paper Details

Date Published: 28 April 2017
PDF: 9 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451M (28 April 2017); doi: 10.1117/12.2258101
Show Author Affiliations
Shimon Levi, Applied Materials, Ltd. (Israel)


Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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