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Irradiation effect on back-gate graphene field-effect transistor
Author(s): Xinlu Chen; Ashok Srivastava; Ashwani K. Sharma; Clay Mayberry
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Paper Abstract

The effects of irradiations on MOSFET and bipolar junction transistors are well known though irradiation mechanisms in two-dimensional graphene and related devices are still being investigated. In this work, we investigate irradiation mechanism based on a semi-empirical model for the graphene back-gate transistor and quantitatively analyze the irradiation influences on electrical properties of the device structure. The irradiation shifts the current which changes the region of device operation, degrades the mobility and increases the channel resistance which can increase the power dissipation. The main mechanism causing the degradation in performance of devices is the oxide trap charges near the SiO2/graphene interface and graphene layer traps charges.

Paper Details

Date Published: 5 May 2017
PDF: 9 pages
Proc. SPIE 10196, Sensors and Systems for Space Applications X, 1019603 (5 May 2017); doi: 10.1117/12.2258096
Show Author Affiliations
Xinlu Chen, Louisiana State Univ. (United States)
Ashok Srivastava, Louisiana State Univ. (United States)
Ashwani K. Sharma, Air Force Research Lab. (United States)
Clay Mayberry, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 10196:
Sensors and Systems for Space Applications X
Khanh D. Pham; Genshe Chen, Editor(s)

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