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Proceedings Paper

Addressing optical proximity correction challenges from highly nonlinear models
Author(s): Stephen Jang; Yunqiang Zhang; Tom Cecil; Howard Cai; Amyn Poonawala; Matt St. John
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Paper Abstract

Model-based optical proximity correction (MB-OPC) has been widely applied in advanced lithography processes today. As k1 factor decreases and circuit design complexity increases, various advanced OPC modeling techniques have been employed to better simulate the lithography processes, such as mask3D (M3D), negative tone development (NTD) modeling techniques, etc. These advanced OPC modeling techniques introduce increasingly nonlinear behaviors in MB-OPC and bring many challenges in controlling edge placement error (EPE) and critical dimension (CD) while maintaining non-aggressive mask correction where possible for mask-rule check (MRC) compliance and better yield. In this paper, we review the MB-OPC challenges, and show our integration of Proteus inverse lithography technology (ILT) with MB-OPC as the solution to these challenges.

Paper Details

Date Published: 24 March 2017
PDF: 8 pages
Proc. SPIE 10147, Optical Microlithography XXX, 101471S (24 March 2017); doi: 10.1117/12.2258088
Show Author Affiliations
Stephen Jang, Synopsys, Inc. (United States)
Yunqiang Zhang, Synopsys, Inc. (United States)
Tom Cecil, Synopsys, Inc. (United States)
Howard Cai, Synopsys, Inc. (United States)
Amyn Poonawala, Synopsys, Inc. (United States)
Matt St. John, Synopsys, Inc. (United States)


Published in SPIE Proceedings Vol. 10147:
Optical Microlithography XXX
Andreas Erdmann; Jongwook Kye, Editor(s)

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