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Proceedings Paper

RESCAN: an actinic lensless microscope for defect inspection of EUV reticles
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Paper Abstract

Actinic mask defect inspection is an essential process step for the implementation of EUV Lithography in high-volume manufacturing. The main challenges for any mask defect inspection platform are resolution, sensitivity, and throughput. The reflective-mode EUV mask scanning lensless imaging microscope (RESCAN) is being developed to provide actinic patterned mask inspection capabilities for defects and patterns with high resolution and high throughput, for node 7 and beyond. Namely, the first goal of the RESCAN project is to develop a tool capable of inspecting an EUV reticle in about 7 hours and detect mask defects down to a size of 10 nm. The lensless imaging concept allows to overcome the resolution limitations due to the numerical aperture (NA) and lens aberrations of conventional actinic mask imaging systems. With the increasing availability of computational power and the refinement of iterative phase reconstruction algorithms, lensless imaging became a powerful tool to synthesize the complex amplitude of the actinic aerial image providing us also with extremely valuable information about phase and mask 3D effects. Here, we present a brief description of the current prototype of the RESCAN platform and illustrate a few experimental examples of programmed defect detection.

Paper Details

Date Published: 24 March 2017
PDF: 8 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 101431O (24 March 2017); doi: 10.1117/12.2258086
Show Author Affiliations
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Patrick Helfenstein, Paul Scherrer Institut (Switzerland)
Istvan Mohacsi, Paul Scherrer Institut (Switzerland)
Rajeev Rajendran, Paul Scherrer Institut (Switzerland)
Shusuke Yoshitake, NuFlare Technology, Inc. (Japan)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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