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Proceedings Paper

Wide-range directed self-assembly lithography enabling wider range of applicable pattern size for both hexagonal multi-hole and line/space
Author(s): Seiji Morita; Ryuichi Saito; Ryosuke Yamamoto; Norikatsu Sasao; Tomoaki Sawabe; Koji Asakawa; Shinobu Sugimura
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Paper Abstract

One of technical issues of directed self-assembly lithography is extremely narrow patterning range. It is really difficult to make not only smaller patterns (pitch of less than 30nm) because of self-assembling limit but also middle patterns (pitch of more than 60nm) because of material synthesis issues. This paper describes wide–range directed self-assembly lithography which enables not only narrow patterns but also wide patterns using newly developed block copolymer. One block of the new block copolymer is easily metalized selectively by metalize technology and it is confirmed that dry etching resistance is markedly improved.

Paper Details

Date Published: 28 March 2017
PDF: 9 pages
Proc. SPIE 10144, Emerging Patterning Technologies, 101440R (28 March 2017); doi: 10.1117/12.2257987
Show Author Affiliations
Seiji Morita, Toshiba Corp. (Japan)
Ryuichi Saito, Toshiba Corp. (Japan)
Ryosuke Yamamoto, Toshiba Corp. (Japan)
Norikatsu Sasao, Toshiba Corp. (Japan)
Tomoaki Sawabe, Toshiba Corp. (Japan)
Koji Asakawa, Toshiba Corp. (Japan)
Shinobu Sugimura, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 10144:
Emerging Patterning Technologies
Christopher Bencher, Editor(s)

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