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Proceedings Paper

High-throughput multi-beam SEM: quantitative analysis of imaging capabilities at IMEC-N10 logic node
Author(s): J. T. Neumann; T. Garbowski; W. Högele; T. Korb; S. Halder; P. Leray; R. Garreis; M. le Maire; D. Zeidler
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Paper Abstract

We use the ZEISS MultiSEM to inspect patterns on separated chips of a semiconductor wafer suited for process window characterization at imec-N10 logic node. We systematically analyze the impact of imaging parameters of the MultiSEM on quantitative metrics extracted from the images, e.g., CD repeatability and relative defect capture, and demonstrate that the MultiSEM is able to image the wafer patterns, track their variations through the process conditions of the lithography scanner, and consistently find patterning defects limiting the lithographic process window.

Paper Details

Date Published: 28 March 2017
PDF: 9 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451S (28 March 2017); doi: 10.1117/12.2257980
Show Author Affiliations
J. T. Neumann, Carl Zeiss SMT GmbH (Germany)
T. Garbowski, Carl Zeiss Microscopy GmbH (Germany)
W. Högele, Carl Zeiss SMT GmbH (Germany)
T. Korb, Carl Zeiss SMT GmbH (Germany)
S. Halder, IMEC (Belgium)
P. Leray, IMEC (Belgium)
R. Garreis, Carl Zeiss SMT GmbH (Germany)
M. le Maire, Carl Zeiss Microscopy GmbH (Germany)
D. Zeidler, Carl Zeiss Microscopy GmbH (Germany)


Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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