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Proceedings Paper

Challenges and progress in low defectivity for advanced ArF and EUV lithography processes using surface localized material technology
Author(s): Michihiro Shirakawa; Hideaki Tsubaki; Hajime Furutani; Wataru Nihashi; Naohiro Tango; Kazuhiro Marumo; Kei Yamamoto; Hidenori Takahashi; Akiyoshi Goto; Mitsuhiro Fujita
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Paper Abstract

The main challenge in ArF lithography is to reduce cost of ownership (CoO) because increase in multi-patterning process is generally required to obtain a fine pattern. As a consequence, industry strongly requires ArF lithography process with a fast scan speed scanner and low defectivity material for CoO. The breakthrough technology to improve defectivity and resolution simultaneously was the polarity-change property of film surface from hydrophobic to hydrophilic after alkaline development process because a property after development process should be only associated with defectivity, not fast scan speed. The materials with high polarity change function were explored to EUV process to achieve low defectivity with good lithography performances.

Paper Details

Date Published: 27 March 2017
PDF: 8 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460E (27 March 2017); doi: 10.1117/12.2257956
Show Author Affiliations
Michihiro Shirakawa, FUJIFILM Corp. (Japan)
Hideaki Tsubaki, FUJIFILM Corp. (Japan)
Hajime Furutani, FUJIFILM Corp. (Japan)
Wataru Nihashi, FUJIFILM Corp. (Japan)
Naohiro Tango, FUJIFILM Corp. (Japan)
Kazuhiro Marumo, FUJIFILM Corp. (Japan)
Kei Yamamoto, FUJIFILM Corp. (Japan)
Hidenori Takahashi, FUJIFILM Corp. (Japan)
Akiyoshi Goto, FUJIFILM Corp. (Japan)
Mitsuhiro Fujita, FUJIFILM Corp. (Japan)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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