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Proceedings Paper

Pattern defect reduction and LER improvement of chemo-epitaxy DSA process
Author(s): Makoto Muramatsu; Takanori Nishi; Gen You; Yusuke Saito; Yasuyuki Ido; Noriaki Oikawa; Toshikatsu Tobana; Kiyohito Ito; Shinya Morikita; Takahiro Kitano
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Paper Abstract

Directed self-assembly (DSA) has been investigated over the past few years as the candidate for next generation lithography. Especially, sub 20nm line and space patterns obtained by chemo-epitaxy process are expected to apply to DRAM active area, Logic fin and narrow metal patterns. One of the biggest advantages of DSA lines is that the pattern pitch is decided by the specific factors of the block copolymer, and it indeed the small pitch walking as a consequence. However, the generating mechanism of the DSA pattern defect is still not cleared1-4 and the line edge roughness (LER) is not overtaken self- aligned quadruple patterning (SAQP).

In this report, we present the latest results regarding the defect reduction and LER improvement work regarding chemoepitaxy line and space pattern. In addition, we introduce the result of application of chemical epitaxy process to hole pattern.

Paper Details

Date Published: 21 March 2017
PDF: 12 pages
Proc. SPIE 10144, Emerging Patterning Technologies, 101440Q (21 March 2017); doi: 10.1117/12.2257952
Show Author Affiliations
Makoto Muramatsu, Tokyo Electron Kyushu Ltd. (Japan)
Takanori Nishi, Tokyo Electron Kyushu Ltd. (Japan)
Gen You, Tokyo Electron Kyushu Ltd. (Japan)
Yusuke Saito, Tokyo Electron Kyushu Ltd. (Japan)
Yasuyuki Ido, Tokyo Electron Kyushu Ltd. (Japan)
Noriaki Oikawa, Tokyo Electron Miyagi Ltd. (Japan)
Toshikatsu Tobana, Tokyo Electron Miyagi Ltd. (Japan)
Kiyohito Ito, Tokyo Electron Miyagi Ltd. (Japan)
Shinya Morikita, Tokyo Electron Miyagi Ltd. (Japan)
Takahiro Kitano, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 10144:
Emerging Patterning Technologies
Christopher Bencher, Editor(s)

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