Share Email Print
cover

Proceedings Paper

Study on thick film spin-on carbon hardmask
Author(s): Taeho Kim; Youngmin Kim; Sunmin Hwang; Hyunsoo Lee; Miyeon Han; Sanghak Lim
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A thick spin-on carbon hardmask (SOH) material is designed to overcome inherent problems of amorphous deposited carbon layer (ACL) and thick photoresist. For ACL in use of semiconductor production process, especially when film thickness from sub-micrometer up to few micrometers is required, not only its inherent low transparency at long wavelength light often causes alignment problems with under layers, but also considerable variation of film thickness within a wafer can also cause patterning problems. To avoid these issues, a thick SOH is designed with monomers of high transparency and good solubility at the same time. In comparison with photoresist, the SOH has good etch resistance and high thermal stability, and it provides wide process window of decreased film thickness and increased thermal budget up to 400°C after processes such as high temperature deposition of SiON. In order to achieve high thickness along with uniform film, many solvent factors was considered such as solubility parameter, surface tension, vapor pressure, and others. By optimizing many solvent factors, we were able to develop a product with a good coating performance

Paper Details

Date Published: 27 March 2017
PDF: 6 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014623 (27 March 2017); doi: 10.1117/12.2257867
Show Author Affiliations
Taeho Kim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Youngmin Kim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Sunmin Hwang, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Hyunsoo Lee, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Miyeon Han, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Sanghak Lim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

© SPIE. Terms of Use
Back to Top