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Proceedings Paper

Investigation on spin-on hard mask integration
Author(s): Yushin Park; Seungwook Shin; Yunjun Kim; Seunghyun Kim; Jaebum Lim; Sung Hwan Kim; Hyeonil Jung; Chungheon Lee; Miyeon Han; Sanghak Lim; Jeong Yun Yu
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Paper Abstract

For fine patterning, there are two possible hard mask integration schemes: quad-layer and tri-layer systems. Due to the different structures and processes between quad- and tri- layer systems, each system needs specific chemical and physical properties of the hard mask. In this paper, we report the properties of the carbon-based spin-on hard mask (CSOH) candidates for various hard mask integrations.

Paper Details

Date Published: 27 March 2017
PDF: 9 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 1014616 (27 March 2017); doi: 10.1117/12.2257846
Show Author Affiliations
Yushin Park, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Seungwook Shin, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Yunjun Kim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Seunghyun Kim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Jaebum Lim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Sung Hwan Kim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Hyeonil Jung, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Chungheon Lee, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Miyeon Han, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Sanghak Lim, SAMSUNG SDI Co., Ltd. (Korea, Republic of)
Jeong Yun Yu, SAMSUNG SDI Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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