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Proceedings Paper

High-volume manufacturing device overlay process control
Author(s): Honggoo Lee; Sangjun Han; Jaeson Woo; DongYoung Lee; ChangRock Song; Hoyoung Heo; Irina Brinster; DongSub Choi; John C. Robinson
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Paper Abstract

Overlay control based on DI metrology of optical targets has been the primary basis for run-to-run process control for many years. In previous work we described a scenario where optical overlay metrology is performed on metrology targets on a high frequency basis including every lot (or most lots) at DI. SEM based FI metrology is performed ondevice in-die as-etched on an infrequent basis. Hybrid control schemes of this type have been in use for many process nodes. What is new is the relative size of the NZO as compared to the overlay spec, and the need to find more comprehensive solutions to characterize and control the size and variability of NZO at the 1x nm node: sampling, modeling, temporal frequency and control aspects, as well as trade-offs between SEM throughput and accuracy.

Paper Details

Date Published: 28 March 2017
PDF: 11 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101450D (28 March 2017); doi: 10.1117/12.2257836
Show Author Affiliations
Honggoo Lee, SK Hynix, Inc. (Korea, Republic of)
Sangjun Han, SK Hynix, Inc. (Korea, Republic of)
Jaeson Woo, SK Hynix, Inc. (Korea, Republic of)
DongYoung Lee, SK Hynix, Inc. (Korea, Republic of)
ChangRock Song, SK Hynix, Inc. (Korea, Republic of)
Hoyoung Heo, KLA-Tencor Corp. (United States)
Irina Brinster, KLA-Tencor Corp. (United States)
DongSub Choi, KLA-Tencor Korea (Korea, Republic of)
John C. Robinson, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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