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Proceedings Paper

Directed self-assembly patterning strategies for phase change memory applications
Author(s): Robert L. Bruce; Gloria Fraczak; John M. Papalia; HsinYu Tsai; Matt BrightSky; Hiroyuki Miyazoe; Yu Zhu; Sebastian U. Engelmann; Hsiang-Lan Lung; Takeshi Masuda; Koukou Suu; Chi-Chun Liu; Hao Tang; John C. Arnold; Nelson Felix; Chung H. Lam
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Paper Abstract

Phase change material (PCM)-based memory cells have shown promise as an enabler for low power, high density memory. There is a current need to develop and improve patterning strategies to attain smaller device dimensions. In this work, two methods of patterning of PCM device structures was achieved using directed self-assembly (DSA) patterning: the formation of a high aspect ratio pore designed for atomic layer deposition (ALD) of etch damage-free PCM, and pillar formation by image reversal and plasma etch transfer into a PCM film. We show significant CD reduction (180 nm to 20 nm) of a lithographically defined hole by plasma etch shrink, DSA spin-coat and subsequent high selectivity pattern transfer. We then demonstrate structural fabrication of both DSA-defined SiN pores with ALD PCM and DSA-defined PCM pillars. Challenges to both pore and pillar fabrication are discussed.

Paper Details

Date Published: 21 March 2017
PDF: 10 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490J (21 March 2017); doi: 10.1117/12.2257829
Show Author Affiliations
Robert L. Bruce, IBM Thomas J. Watson Research Ctr. (United States)
Gloria Fraczak, IBM Thomas J. Watson Research Ctr. (United States)
John M. Papalia, IBM Thomas J. Watson Research Ctr. (United States)
HsinYu Tsai, IBM Thomas J. Watson Research Ctr. (United States)
Matt BrightSky, IBM Thomas J. Watson Research Ctr. (United States)
Hiroyuki Miyazoe, IBM Thomas J. Watson Research Ctr. (United States)
Yu Zhu, IBM Thomas J. Watson Research Ctr. (United States)
Sebastian U. Engelmann, IBM Thomas J. Watson Research Ctr. (United States)
Hsiang-Lan Lung, Macronix International Co., Ltd. (Taiwan)
Takeshi Masuda, ULVAC, Inc. (Japan)
Koukou Suu, ULVAC, Inc. (Japan)
Chi-Chun Liu, IBM Albany NanoTech (United States)
Hao Tang, IBM Albany NanoTech (United States)
John C. Arnold, IBM Albany NanoTech (United States)
Nelson Felix, IBM Albany NanoTech (United States)
Chung H. Lam, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

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