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Proceedings Paper

Research on transmission high sensitivity GaAs cathode of low light level image devices
Author(s): Ke Xu; Kunye Han; Jiangtao Xu
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Paper Abstract

To strive for the goal of further improving the overall performance of low-light-level Gen.Ⅲ image intensifier tube, modifications and innovations in the making of GaAs photocathode are already underway revolving around the basis of existing research, through which the sensitivity of GaAs photocathode is considerably improved from 1200μA/lm to above 1800μA/lm, 2000μA/lm (typical value), and it won’t drop within the 1000hrs’ storage inside the station according to the experiment on the photoemission stability of high-sensitivity GaAs photocathode. In short, highly distinguished characteristics of high sensitivity GaAs photocathode like wide response range, superior quantum efficiency and 1.06μm infrared response wavelength, promise its remarkable significance in both the enhancement of the overall performance and the prolongation of the operational life-span of low-lightlevel Gen.Ⅲ image intensifier tube.

Paper Details

Date Published: 28 February 2017
PDF: 8 pages
Proc. SPIE 10256, Second International Conference on Photonics and Optical Engineering, 102563H (28 February 2017); doi: 10.1117/12.2257817
Show Author Affiliations
Ke Xu, Xi'an Institute of Applied Optics (China)
North Night Vision Science and Technology Group Co. Ltd. (China)
Kunye Han, Xi'an Institute of Applied Optics (China)
North Night Vision Science and Technology Group Co. Ltd. (China)
Jiangtao Xu, Xi'an Institute of Applied Optics (China)
North Night Vision Science and Technology Group Co. Ltd. (China)


Published in SPIE Proceedings Vol. 10256:
Second International Conference on Photonics and Optical Engineering
Chunmin Zhang; Anand Asundi, Editor(s)

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