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Free energy modeling of block-copolymer within pillar confinements on DSA lithography
Author(s): Seokhan Park; Joonsoo Park; Jemin Park; Hyun-Woo Kim; Changhyun Cho; Hyeongsun Hong; Kyupil Lee; ES Jung
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Paper Abstract

To a major candidate and beyond, directed self-assembly (DSA) lithography is investigated on DRAM contact-hole fabrication. We perform a systematic study about behavior of asymmetric PS-b-PMMA block copolymers (BCP) within pillar confinement for DSA and find that selectively removed PMMA contact domain has a different morphology according to chemically modified pillar surfaces. We calculate the perturbation of PMMA contacts by pillar diameter using free energy magnitude model. This established model provides practical engineering insight for present pillar scheme and future graphoepitaxial self-assembly techniques for semiconductor DSA procedure.

Paper Details

Date Published: 21 March 2017
PDF: 6 pages
Proc. SPIE 10144, Emerging Patterning Technologies, 101440F (21 March 2017); doi: 10.1117/12.2257638
Show Author Affiliations
Seokhan Park, Samsung Electronics Co. (Korea, Republic of)
Joonsoo Park, Samsung Electronics Co. (Korea, Republic of)
Jemin Park, Samsung Electronics Co. (Korea, Republic of)
Hyun-Woo Kim, Samsung Electronics Co. (Korea, Republic of)
Changhyun Cho, Samsung Electronics Co. (Korea, Republic of)
Hyeongsun Hong, Samsung Electronics Co. (Korea, Republic of)
Kyupil Lee, Samsung Electronics Co. (Korea, Republic of)
ES Jung, Samsung Electronics Co. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10144:
Emerging Patterning Technologies
Christopher Bencher, Editor(s)

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