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Proceedings Paper

N7 dark field two-bar in 0.33NA EUVL: Mitigation of CD Bossung tilts caused by strong coupling between the feature's primary and 1st self-image
Author(s): T. Last; P. van Adrichem; L. de Winter; S. Hsu; J. Finders; F. Wittebrood; M. van de Kerkhof
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Paper Abstract

We report a study into intensity-driven mask 3D effects for N7 dark field two-bars in EUVL. For these features, traditional pupil optimization "rules" are advising to center a symmetric leaf shape illumination at the pupil plane location σY = (-0.64, 0.64). Experimentally determined critical dimension Bossungs for this exposure condition however yield an extreme best focus separation due to an additional Bossung tilt appearing at defocus values beyond 20 nm for the bottom trench. The Bossung tilts are caused by a strong coupling between the primary image of the two-bar and its first local pitch-induced self-image. The coupling to the self-image can be suppressed and, hence, the overlapping process window can be enhanced by the application of asymmetric sources, or by using standard dipole 90Y or leaf shape illuminations in combination with optimally placed sub-resolution assist features.

Paper Details

Date Published: 24 March 2017
PDF: 6 pages
Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII, 1014311 (24 March 2017); doi: 10.1117/12.2257463
Show Author Affiliations
T. Last, ASML Netherlands B.V. (Netherlands)
P. van Adrichem, ASML Netherlands B.V. (Netherlands)
L. de Winter, ASML Netherlands B.V. (Netherlands)
S. Hsu, ASML Netherlands B.V. (Netherlands)
J. Finders, ASML Netherlands B.V. (Netherlands)
F. Wittebrood, ASML Netherlands B.V. (Netherlands)
M. van de Kerkhof, ASML Netherlands B.V. (Netherlands)


Published in SPIE Proceedings Vol. 10143:
Extreme Ultraviolet (EUV) Lithography VIII
Eric M. Panning, Editor(s)

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