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Proceedings Paper

The line roughness improvement with plasma coating and cure treatment for 193nm lithography and beyond
Author(s): Erhu Zheng; Yi Huang; Haiyang Zhang
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Paper Abstract

As CMOS technology reaches 14nm node and beyond, one of the key challenges of the extension of 193nm immersion lithography is how to control the line edge and width roughness (LER/LWR). For Self-aligned Multiple Patterning (SaMP), LER becomes larger while LWR becomes smaller as the process proceeds[1]. It means plasma etch process becomes more and more dominant for LER reduction. In this work, we mainly focus on the core etch solution including an extra plasma coating process introduced before the bottom anti reflective coating (BARC) open step, and an extra plasma cure process applied right after BARC-open step. Firstly, we leveraged the optimal design experiment (ODE) to investigate the impact of plasma coating step on LER and identified the optimal condition. ODE is an appropriate method for the screening experiments of non-linear parameters in dynamic process models, especially for high-cost-intensive industry [2]. Finally, we obtained the proper plasma coating treatment condition that has been proven to achieve 32% LER improvement compared with standard process. Furthermore, the plasma cure scheme has been also optimized with ODE method to cover the LWR degradation induced by plasma coating treatment.

Paper Details

Date Published: 21 March 2017
PDF: 5 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 101490Y (21 March 2017); doi: 10.1117/12.2257395
Show Author Affiliations
Erhu Zheng, Semiconductor Manufacturing International Corp. (China)
Yi Huang, Semiconductor Manufacturing International Corp. (China)
Haiyang Zhang, Semiconductor Manufacturing International Corp. (China)


Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

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