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Proceedings Paper

Asymmetric, nonbroadened waveguide structures for double QW high-power 808nm diode laser
Author(s): S. P. Abbasi; M. H. Mahdieh
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Paper Abstract

In this paper, we propose an asymmetric epitaxial layer structre for designing 808nm diode laser. In this asymmetric sructure, the p-waveguide is reduced in thickness and the p-cladding is doped for increasing the thermal conductivity and consequently better heat extraction. The main purpose of using such design is enhancing the laser gain by reduction of loss in laser cavity, and reduction of electrical and thermal resistivity of the diode laser.

Paper Details

Date Published: 13 January 2017
PDF: 6 pages
Proc. SPIE 10254, XXI International Symposium on High Power Laser Systems and Applications 2016, 1025406 (13 January 2017); doi: 10.1117/12.2257308
Show Author Affiliations
S. P. Abbasi, Iran Univ. of Science and Technology (Iran, Islamic Republic of)
Iranian National Ctr. for Laser Science and Technology (Iran, Islamic Republic of)
M. H. Mahdieh, Iranian National Ctr. for Laser Science and Technology (Iran, Islamic Republic of)


Published in SPIE Proceedings Vol. 10254:
XXI International Symposium on High Power Laser Systems and Applications 2016
Dieter Schuoecker; Richard Majer; Julia Brunnbauer, Editor(s)

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