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Proceedings Paper

High-precision CD measurement using energy-filtering SEM techniques
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Paper Abstract

Voltage contrast (VC) images obtained using an energy filter (EF) were used to measure the bottom surface of high-aspect- ratio (HAR) structures. The VC images obtained using the conventional EF were sensitive to variations in wafer potential. Since CD-SEM metrology requires precise EF voltage control when using VC images, we developed an EF voltage correction method to be used at each measurement point. Consequently, bottom-edge measurement, independent of the wafer potential fluctuations, was achieved by using the newly developed EF. Our developed technique is effective for CD-SEM metrology using VC images.

Paper Details

Date Published: 28 March 2017
PDF: 7 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451K (28 March 2017); doi: 10.1117/12.2257205
Show Author Affiliations
Daisuke Bizen, Hitachi, Ltd. (Japan)
Makoto Sakakibara, Hitachi, Ltd. (Japan)
Makoto Suzuki, Hitachi High-Tech Science Corp. (Japan)
Yoshinori Momonoi, Hitachi High-Tech Science Corp. (Japan)
Hajime Kawano, Hitachi High-Tech Science Corp. (Japan)


Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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