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Proceedings Paper

Study on the etching process GaAs-based VCSEL
Author(s): Yuan Feng; Guojun Liu; Yongqin Hao; Changling Yan; Jiabin Zhang; Yang Li; Zaijin Li
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Paper Abstract

Wet etching process is a key technology in fabrication of VCSEL and their array in order to improve opto-electric characteristics of high-power VCSEL, devices with multi-ring distribution hole VCSEL is fabricated. The H3PO4 etching solution was used in the wet etching progress and etching rate is studied by changing etching solution concentration and etching time. The optimum technological conditions were determined by studying the etching morphology and etching depth of the GaAs-VCSEL. The tested results show that the complete morphology and the appropriate depth can be obtained by using the concentration ratio of 1:1:10, which can meet the requirements of GaAs-based VCSEL micro- structure etching process.

Paper Details

Date Published: 7 November 2016
PDF: 5 pages
Proc. SPIE 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016, 101410I (7 November 2016); doi: 10.1117/12.2257056
Show Author Affiliations
Yuan Feng, Changchun Univ. of Science and Technology (China)
Guojun Liu, Changchun Univ. of Science and Technology (China)
Yongqin Hao, Changchun Univ. of Science and Technology (China)
Changling Yan, Changchun Univ. of Science and Technology (China)
Jiabin Zhang, Changchun Univ. of Science and Technology (China)
Yang Li, Changchun Univ. of Science and Technology (China)
Zaijin Li, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10141:
Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016
Yueguang Lv; Weimin Bao; Guangjun Zhang, Editor(s)

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