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Proceedings Paper

Fabrication of the new structure 980nm VCSEL
Author(s): Yuan Feng; Guojun Liu; Yongqin Hao; Changling Yan; Jiabin Zhang; Yang Li; Zaijin Li
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Paper Abstract

In this paper, the new structure of 980nm VCSEL was designed and fabricated in order to improve thermal problem and photo-electricity characteristic. From the point of view reduced equivalent resistance, P-side electrode was designed as intra-cavity contact structure. The VCSEL with conventional flip bottom emission structure and intra-cavity contact structure have been fabricated with the same aperture and tested comparatively. the new structure has a differential resistance of 21Ω, but the conventional structure has a differential resistance of 25.5Ω. The tested results showed that this new-type structure VCSEL is expected to improve the thermal characteristics of the device and the opto-electric characteristics.

Paper Details

Date Published: 7 November 2016
PDF: 5 pages
Proc. SPIE 10141, Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016, 101410H (7 November 2016); doi: 10.1117/12.2257053
Show Author Affiliations
Yuan Feng, Changchun Univ. of Science and Technology (China)
Guojun Liu, Changchun Univ. of Science and Technology (China)
Yongqin Hao, Changchun Univ. of Science and Technology (China)
Changling Yan, Changchun Univ. of Science and Technology (China)
Jiabin Zhang, Changchun Univ. of Science and Technology (China)
Yang Li, Changchun Univ. of Science and Technology (China)
Zaijin Li, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10141:
Selected Papers of the Chinese Society for Optical Engineering Conferences held July 2016
Yueguang Lv; Weimin Bao; Guangjun Zhang, Editor(s)

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