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Proceedings Paper

High-resolution, high-throughput, CMOS-compatible electron-beam patterning
Author(s): Melissa A. Smith; Steven A. Vitale; Theodore H. Fedynyshyn; Matthew T. Cook; Joel Maldonado; Dmitri Shapiro; Mordechai Rothschild
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Paper Abstract

Two scanning electron beam lithography (SEBL) patterning processes have been developed, one positive and one negative tone. The processes feature nanometer-scale resolution, chemical amplification for faster throughput, long film life under vacuum, and sufficient etch resistance to enable patterning of a variety of materials with a metal-free (CMOS/MEMS compatible) tool set. These resist processes were developed to address two limitations of conventional SEBL resist processes: (1) low areal throughput and (2) limited compatibility with the traditional microfabrication infrastructure.

Paper Details

Date Published: 27 March 2017
PDF: 10 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101461H (27 March 2017); doi: 10.1117/12.2256649
Show Author Affiliations
Melissa A. Smith, MIT Lincoln Lab. (United States)
Steven A. Vitale, MIT Lincoln Lab. (United States)
Theodore H. Fedynyshyn, MIT Lincoln Lab. (United States)
Matthew T. Cook, MIT Lincoln Lab. (United States)
Joel Maldonado, MIT Lincoln Lab. (United States)
Dmitri Shapiro, MIT Lincoln Lab. (United States)
Mordechai Rothschild, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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