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Experimental characterization of NTD resist shrinkage
Author(s): Bernd Küchler; Thomas Mülders; Hironobu Taoka; Weimin Gao; Ulrich Klostermann; Sou Kamimura; Grozdan Grozev; Masahiro Yoshidome; Michihiro Shirakawa; Waikin Li
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Paper Abstract

Simulation of negative tone development (NTD) resist has become a challenge for physical resist modeling. Traditionally, resist modeling was mainly limited to reaction-diffusion models for post exposure bake (PEB) and standard development rate models for simulating the pattern formation during the final development step. With some minor extensions, this simulation approach sufficiently predicted resist CDs and resist profile shapes that were in agreement with experimental data.3 For the latest NTD resists, this situation has changed. In contrast to positive tone development (PTD) resists, resist shrinkage is strongly impacting resist profile shapes. Furthermore, NTD resists induce strong proximity effects that require consideration of additional chemical resist properties in modeling and model calibration. In this paper we experimentally characterize and model the main properties of NTD photo-resists.

Paper Details

Date Published: 24 March 2017
PDF: 8 pages
Proc. SPIE 10147, Optical Microlithography XXX, 101470F (24 March 2017); doi: 10.1117/12.2256568
Show Author Affiliations
Bernd Küchler, Synopsys GmbH (Germany)
Thomas Mülders, Synopsys GmbH (Germany)
Hironobu Taoka, Synopsys GmbH (Germany)
Weimin Gao, Synopsys GmbH (Germany)
Ulrich Klostermann, Synopsys GmbH (Germany)
Sou Kamimura, FUJIFILM Corp. (Japan)
Grozdan Grozev, FUJIFILM Corp. (Japan)
Masahiro Yoshidome, FUJIFILM Corp. (Japan)
Michihiro Shirakawa, FUJIFILM Corp. (Japan)
Waikin Li, IMEC (Belgium)


Published in SPIE Proceedings Vol. 10147:
Optical Microlithography XXX
Andreas Erdmann; Jongwook Kye, Editor(s)

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