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Proceedings Paper

Enhanced electroluminescent cooling in GaN-based light-emitting diodes
Author(s): Joachim Piprek; Zhan-Ming Simon Li
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Paper Abstract

Optimized GaN-based light-emitting diodes (LEDs) were recently demonstrated to emit photons of higher energy than provided by the injected electrons up to elevated currents beyond the peak of the power conversion efficiency. Correspondingly, the electrical efficiency is above unity, which is attributed to heat extraction from the crystal lattice. In good agreement with measurements, we investigate the origin of such electroluminescent cooling by advanced numerical simulation including all relevant heat transfer mechanisms. For the first time, our simulations reveal the magnitude and the local profile of the heat extraction from the lattice. The built-in nitride polarization field is found to enhance the cooling effect significantly.

Paper Details

Date Published: 20 February 2017
PDF: 7 pages
Proc. SPIE 10107, Smart Photonic and Optoelectronic Integrated Circuits XIX, 101070X (20 February 2017); doi: 10.1117/12.2256232
Show Author Affiliations
Joachim Piprek, NUSOD Institute LLC (United States)
Zhan-Ming Simon Li, Crosslight Software Inc. (Canada)

Published in SPIE Proceedings Vol. 10107:
Smart Photonic and Optoelectronic Integrated Circuits XIX
Louay A. Eldada; El-Hang Lee; Sailing He, Editor(s)

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