Share Email Print

Proceedings Paper

Intracavity and extracavity-contacted 980-nm oxide-confined VCSELs for optical interconnects and integration
Author(s): Philip Moser; Holger Schmeckebier; Marcin Gębski; Patrycja Śpiewak; Ricardo Rosales; Kilian Moser; Michał Wasiak; James A. Lott
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Record-large modulation bandwidths of 30 GHz and larger have been achieved with state-of-the art directly and indirectly modulated VCSELs and VCSEL arrays. One next big challenge is to make VCSELs viable for integration onto silicon while maintaining large bandwidth values. Various integration schemes of VCSELs might require process variations potentially detrimental for large modulation bandwidths. We present and compare directly modulated oxide-confined top-emitting 980-nm VCSELs processed from one single epitaxial wafer design into four different extracavity and intracavity contact variations.

Paper Details

Date Published: 25 February 2017
PDF: 10 pages
Proc. SPIE 10122, Vertical-Cavity Surface-Emitting Lasers XXI, 101220J (25 February 2017); doi: 10.1117/12.2256177
Show Author Affiliations
Philip Moser, Technische Univ. Berlin (Germany)
Holger Schmeckebier, Technische Univ. Berlin (Germany)
Marcin Gębski, Technische Univ. Berlin (Germany)
Lodz Univ. of Technology (Poland)
Patrycja Śpiewak, Lodz Univ. of Technology (Poland)
Ricardo Rosales, Technische Univ. Berlin (Germany)
Kilian Moser, Technische Univ. Berlin (Germany)
Michał Wasiak, Lodz Univ. of Technology (Poland)
James A. Lott, Technische Univ. Berlin (Germany)

Published in SPIE Proceedings Vol. 10122:
Vertical-Cavity Surface-Emitting Lasers XXI
Kent D. Choquette; Chun Lei, Editor(s)

© SPIE. Terms of Use
Back to Top