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Proceedings Paper

Microlasers based on high-Q rare-earth-doped aluminum oxide resonators on silicon (Conference Presentation)
Author(s): Jonathan D. B. Bradley; Zhan Su; Henry C. Frankis; Emir Salih Magden; Nanxi Li; Matthew Byrd; Purnawirman Purnawirman; Ehsan Shah Hosseini; Thomas N. Adam; Gerald Leake; Douglas Coolbaugh; Michael R. Watts

Paper Abstract

One of the key challenges in the field of silicon photonics remains the development of compact integrated light sources. In one approach, rare-earth-doped glass microtoroid and microdisk lasers have been integrated on silicon and exhibit ultra-low thresholds. However, such resonator structures are isolated on the chip surface and require an external fiber to couple light to and from the cavity. Here, we review our recent work on monolithically integrated rare-earth-doped aluminum oxide microcavity lasers on silicon. The microlasers are enabled by a novel high-Q cavity design, which includes a co-integrated silicon nitride bus waveguide and a silicon dioxide trench filled with rare-earth-doped aluminum oxide. In passive (undoped) microresonators we measure internal quality factors as high as 3.8 × 105 at 0.98 µm and 5.7 × 105 at 1.5 µm. In ytterbium, erbium, and thulium-doped microcavities with diameters ranging from 80 to 200 µm we show lasing at 1.0, 1.5 and 1.9 µm, respectively. We observe sub-milliwatt lasing thresholds, approximately 10 times lower than previously demonstrated in monolithic rare-earth-doped lasers on silicon. The entire fabrication process, which includes post-processing deposition of the gain medium, is silicon-compatible and allows for integration with other silicon-based photonic devices. Applications of such rare earth microlasers in communications and sensing and recent design enhancements will be discussed.

Paper Details

Date Published: 19 April 2017
PDF: 1 pages
Proc. SPIE 10106, Integrated Optics: Devices, Materials, and Technologies XXI, 1010602 (19 April 2017); doi: 10.1117/12.2255955
Show Author Affiliations
Jonathan D. B. Bradley, McMaster Univ. (Canada)
Zhan Su, Massachusetts Institute of Technology (United States)
Henry C. Frankis, McMaster Univ. (Canada)
Emir Salih Magden, Massachusetts Institute of Technology (United States)
Nanxi Li, Massachusetts Institute of Technology (United States)
Harvard Univ. (United States)
Matthew Byrd, Massachusetts Institute of Technology (United States)
Purnawirman Purnawirman, Massachusetts Institute of Technology (United States)
Ehsan Shah Hosseini, Analog Photonics (United States)
Thomas N. Adam, Univ. at Albany (United States)
Gerald Leake, Univ. at Albany (United States)
Douglas Coolbaugh, Univ. at Albany (United States)
Michael R. Watts, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 10106:
Integrated Optics: Devices, Materials, and Technologies XXI
Sonia M. García-Blanco; Gualtiero Nunzi Conti, Editor(s)

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