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Proceedings Paper

Model-free determination of optical constants: application to undoped and Ga-doped ZnO
Author(s): David C. Look; Buguo Wang; Kevin D. Leedy
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Paper Abstract

For single slabs of uniform material, such as bulk semiconductors, we derive closed-form expressions for absorption and reflection coefficients, ∝ and R, respectively, in terms of measured reflectance and transmittance, Rm and Tm. The formula for α can replace the several commonly used approximations for ∝ as a function of Tm, and in particular does not require ∝d >> 1, where d is the thickness. Thus, it can be applied to weak impurity absorptions, such as Fe absorption in Fe-doped GaN. Finally, the real (η) and imaginary (κ) parts of the index of refraction (n = η + iκ) can be obtained from ∝ and R and agree well with η and κ results obtained from other experiments. For multi-layer structures, “effective” values of ∝, R, η, and κ are obtained, but they can often be assigned to a particular layer. This new technique has been successfully applied to many bulk and layered structures.

Paper Details

Date Published: 2 March 2017
PDF: 12 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050H (2 March 2017); doi: 10.1117/12.2255769
Show Author Affiliations
David C. Look, Wright State Univ. (United States)
Air Force Research Lab. (United States)
Wyle Labs. (United States)
Buguo Wang, Wright State Univ. (United States)
Kevin D. Leedy, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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