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Proceedings Paper

Near-IR (1 – 4 μm) control of plasmonic resonance wavelength in Ga-doped ZnO
Author(s): David C. Look; Kevin D. Leedy; Gordon J. Grzybowski; Bruce B. Claflin
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Paper Abstract

The plasmonic resonance wavelength λres in ZnO doped with 3wt%Ga2O3 can be controlled over the range 1 – 4 μm by simple furnace annealing in flowing Ar. For each annealing temperature TA, the reflectance Rm and transmittance Tm are measured over a wavelength range, λ = 185 – 3200 nm, (energy range, E = 6.7 – 0.387 eV), and the reflectance coefficient R is calculated from Rm and Tm. The value of λres is then determined from a Drude-theory analysis of R vs E that yields fitting parameters nopt (optical carrier concentration), μopt (optical mobility), high-frequency dielectric constant ε, and thickness d, at each annealing temperature TA. The validity of this process is confirmed by comparison of ε with literature values, and comparison of nopt and μopt with analogous quantities n and μH measured by the Hall-effect.

Paper Details

Date Published: 2 March 2017
PDF: 13 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101050Q (2 March 2017); doi: 10.1117/12.2255763
Show Author Affiliations
David C. Look, Wright State Univ. (United States)
Air Force Research Lab. (United States)
Kevin D. Leedy, Air Force Research Lab. (United States)
Gordon J. Grzybowski, Air Force Research Lab. (United States)
Wyle Labs. (United States)
Bruce B. Claflin, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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