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Proceedings Paper

Broadened waveguide laser structures at 780 nm
Author(s): Jin Huang; Gary Evans; Jerome Butler; Linglin Jiang; Preston Young; Duy Phan; Daniel Smith; Mark Schuckert
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Paper Abstract

Two AlGaAs/GaAs broadened waveguide laser structures, one asymmetric, one nearly symmetric, were designed for high power at about 780 nm. The design concept is based on low losses and higher gain for the fundamental mode with higher losses and lower gain for higher-order modes. To achieve these results, the positions of the quantum wells, thicknesses of the cladding layers, doping profiles, and the compositions of all the layers are carefully chosen. The structures are designed to have a loss of about 0.5/cm for the TE0 mode and more than 5 /cm for higher order modes for both structures. The asymmetric structure has a lower threshold current density (~750 A/cm2) and a higher slope (about 0.9 W/A) of the light-current curve compared to the symmetric structure. Increased L-I slope for the asymmetric structure results mainly from increased hole injection efficiency because the quantum wells are close to the p-side. Ridge-guide lasers fabricated with the asymmetric structure produced greater than 350 mW at 25°C. The beam divergence of the asymmetric structure was 6° × 14°.

Paper Details

Date Published: 22 February 2017
PDF: 10 pages
Proc. SPIE 10086, High-Power Diode Laser Technology XV, 100860M (22 February 2017); doi: 10.1117/12.2255065
Show Author Affiliations
Jin Huang, Southern Methodist Univ. (United States)
Gary Evans, Southern Methodist Univ. (United States)
Jerome Butler, Southern Methodist Univ. (United States)
Linglin Jiang, Photodigm, Inc. (United States)
Preston Young, Photodigm, Inc. (United States)
Duy Phan, Photodigm, Inc. (United States)
Daniel Smith, OSI Laser Diode, Inc. (United States)
Mark Schuckert, OSI Laser Diode, Inc. (United States)


Published in SPIE Proceedings Vol. 10086:
High-Power Diode Laser Technology XV
Mark S. Zediker, Editor(s)

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