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Proceedings Paper

MgZnO grown by molecular beam epitaxy on N-Type β-Ga2O3 for UV Schottky barrier solar-blind photodetectors
Author(s): Mykyta Toporkov; Partha Mukhopadhyay; Haider Ali; Valeria Beletsky; Fikadu Alema; Andrei Osinsky; Winston V. Schoenfeld
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Paper Abstract

MgZnO is an attractive semiconductor alloy for UV optoelectronic and electronic devices. Due to recent progress and availability of high quality Ga2O3 substrates and its high solar-blind bandgap of ~4.9 eV, it is desirable to investigate its application for solar-blind applications as a potential substrate alternative to sapphire for MgZnO. MgZnO alloys have been grown using plasma-assisted molecular beam epitaxy on Sn doped n-type (010) β-Ga2O3 substrates. It was found MgZnO growth with a MgO buffer layer has a rocksalt lattice structure. In-situ RHEED observations show that the sample grown with a MgO buffer shows two-dimensional growth and a surface roughness with root-mean-square (RMS) below 2 nm. On the other hand, MgZnO grown without a MgO buffer has a mixed phase of rocksalt and wurtzite lattice structures. Additionally, as the initial step for the fabrication of tunable wavelength solar-blind photodetectors, Schottky barrier photodetectors have been fabricated, demonstrating zero (0 V) bias responsivity of 0.1 μA/W (rocksalt MgZnO), 0.7 μA/W (mixed phase MgZnO) and 1.3 μA/W (mixed phase MgZnO) at 230 nm, 310 nm and 335 nm, respectively.

Paper Details

Date Published: 24 February 2017
PDF: 10 pages
Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051N (24 February 2017); doi: 10.1117/12.2254937
Show Author Affiliations
Mykyta Toporkov, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Partha Mukhopadhyay, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Haider Ali, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Valeria Beletsky, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Fikadu Alema, Agnitron Technology, Inc. (United States)
Andrei Osinsky, Agnitron Technology, Inc. (United States)
Winston V. Schoenfeld, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 10105:
Oxide-based Materials and Devices VIII
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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