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Proceedings Paper

Design of Al-rich AlGaN quantum well structures for efficient UV emitters
Author(s): Mitsuru Funato; Shuhei Ichikawa; Kyosuke Kumamoto; Yoichi Kawakami
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Paper Abstract

The effects of the structure design of AlGaN-based quantum wells (QWs) on the optical properties are discussed. We demonstrate that to achieve efficient emission in the germicidal wavelength range (250 – 280 nm), AlxGa1−xN QWs in an AlyGa1−yN matrix (x < y) is quite effective, compared with those in an AlN matrix: Time-resolved photoluminescence and cathodoluminescence spectroscopies show that the AlyGa1−yN matrix can enhance the radiative recombination process and can prevent misfit dislocations, which act as non-radiative recombination centers, from being induced in the QW interface. As a result, the emission intensity at room temperature is about 2.7 times larger for the AlxGa1−xN QW in the AlyGa1−yN matrix than that in the AlN matrix. We also point out that further reduction of point defects is crucial to achieve an even higher emission efficiency.

Paper Details

Date Published: 16 February 2017
PDF: 7 pages
Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101040I (16 February 2017); doi: 10.1117/12.2254797
Show Author Affiliations
Mitsuru Funato, Kyoto Univ. (Japan)
Shuhei Ichikawa, Kyoto Univ. (Japan)
Kyosuke Kumamoto, Kyoto Univ. (Japan)
Yoichi Kawakami, Kyoto Univ. (Japan)


Published in SPIE Proceedings Vol. 10104:
Gallium Nitride Materials and Devices XII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç; Yasushi Nanishi; Ulrich T. Schwarz; Jong-In Shim, Editor(s)

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