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Proceedings Paper

Investigation into the origin of parasitic absorption in GaInP|GaAs double heterostructures
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Paper Abstract

Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaInP|GaAs double heterostructures (DHS) has never been realized. This is due to an unknown source of parasitic absorption. Prior studies have ruled out the possibility of the bulk absorption from the GaAs layer. Thus it is thought to be either at the air- GaInP interface, through the presence of dangling bonds, or in bulk GaInP through impurities. Using two-color thermallens calorimetry (based on the Z-scan technique), this study indicates that that the parasitic absorption likely originates from the GaInP bulk layers.

Paper Details

Date Published: 17 February 2017
PDF: 8 pages
Proc. SPIE 10121, Optical and Electronic Cooling of Solids II, 101210F (17 February 2017); doi: 10.1117/12.2254702
Show Author Affiliations
Nathan Giannini, The Univ. of New Mexico (United States)
Zhou Yang, The Univ. of New Mexico (United States)
Alexander R. Albrecht, The Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 10121:
Optical and Electronic Cooling of Solids II
Richard I. Epstein; Denis V. Seletskiy; Mansoor Sheik-Bahae, Editor(s)

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