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Proceedings Paper

InGaAs/GaAsSb type-II quantum well focal plane array with cutoff-wavelength of 2.5 um
Author(s): T. Kawahara; K. Machinaga; B. Sundararajan; K. Miura; M. Migita; H. Obi; T. Fuyuki; K. Fujii; T. Ishizuka; H. Inada; Y. Iguchi
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Paper Abstract

In the short wavelength infrared (SWIR) region, InGaAs/GaAsSb type-II quantum well absorption structures are proposed as an attractive material for realizing low dark current. Recently QVGA format (array size 320×256) focal plane array (FPA) with cutoff-wavelength of 2.35 μm was demonstrated for commercial use by our group. We succeeded in extending cut-off wavelength of FPA consisting of InGaAs/GaAsSb type-II quantum well up to 2.5 μm. The 250-pairs InGaAs/GaAsSb quantum well structure lattice matched to InP substrate was grown by metal organic vapor phase epitaxy (MOVPE). The p-n junction of each pixel was formed by selective zinc diffusion method. Dark current of pixel showed the diffusion current limited mode and slightly better than that of HgCdTe with a same cutoff-wavelength. We present the electrical and optical characteristics of InGaAs/GaAsSb type-II quantum well FPA with cutoff-wavelength of 2.5 μm.

Paper Details

Date Published: 27 January 2017
PDF: 7 pages
Proc. SPIE 10111, Quantum Sensing and Nano Electronics and Photonics XIV, 1011115 (27 January 2017); doi: 10.1117/12.2254566
Show Author Affiliations
T. Kawahara, Sumitomo Electric Industries, Ltd. (Japan)
K. Machinaga, Sumitomo Electric Industries, Ltd. (Japan)
B. Sundararajan, Sumitomo Electric Industries, Ltd. (Japan)
K. Miura, Sumitomo Electric Industries, Ltd. (Japan)
M. Migita, Sumitomo Electric Industries, Ltd. (Japan)
H. Obi, Sumitomo Electric Industries, Ltd. (Japan)
T. Fuyuki, Sumitomo Electric Industries, Ltd. (Japan)
K. Fujii, Sumitomo Electric Industries, Ltd. (Japan)
T. Ishizuka, Sumitomo Electric Industries, Ltd. (Japan)
H. Inada, Sumitomo Electric Industries, Ltd. (Japan)
Y. Iguchi, Sumitomo Electric Industries, Ltd. (Japan)


Published in SPIE Proceedings Vol. 10111:
Quantum Sensing and Nano Electronics and Photonics XIV
Manijeh Razeghi, Editor(s)

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