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Proceedings Paper

Modeling and analysis of scattering from silicon nanoparticles with high excess carriers for MIR spectroscopy
Author(s): Ibrahim Shoer; Ahmed Nageeb; Abdelrahman Osman; Hosam I. Mekawey; Yehea Ismail; Mohamed A. Swillam
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Paper Abstract

In this work a detailed analysis of the scattering cross-section of silicon Nano-particles with high number of excess carriers in the near and Mid Infrared (MIR) is provided. The effect of different radii of the nanoparticles on the resonance peaks is studied using Mie theory and verified using FDTD. The effect of the level of excess carrier generated on the scattering cross section also analyzed. The study reveals many useful characteristics for such particles which behaves as plasmonic particles in the MIR. Using this study, different particles are designed as scatters in the MIR based on specific dimensions and excess carriers level. These particles can be utilized for infrared spectroscopy of different application such as gas and biomedical sensing in the MIR.

Paper Details

Date Published: 22 February 2017
PDF: 7 pages
Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100981K (22 February 2017); doi: 10.1117/12.2254204
Show Author Affiliations
Ibrahim Shoer, Alexandria Univ. (Egypt)
Ahmed Nageeb, Alexandria Univ. (Egypt)
Abdelrahman Osman, Alexandria Univ. (Egypt)
Hosam I. Mekawey, The American Univ. in Cairo (Egypt)
Zewail City of Science and Technology (Egypt)
Yehea Ismail, The American Univ. in Cairo (Egypt)
Zewail City of Science and Technology (Egypt)
Mohamed A. Swillam, The American Univ. in Cairo (Egypt)

Published in SPIE Proceedings Vol. 10098:
Physics and Simulation of Optoelectronic Devices XXV
Bernd Witzigmann; Marek Osiński; Yasuhiko Arakawa, Editor(s)

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